Ключевое слово: «schottky barrier»

In this work, we synthesized and comprehensively studied monolayer molybdenum disulfide (MoS2) obtained by chemical vapor deposition (CVD), with a focus on the characterization of the MoS2/Ag contact. Raman spectroscopy confirmed the formation of uniform, high-quality monolayer structures. Electrical investigations of the MoS2/Ag interface and analysis of the activation energy dependence of conductivity allowed us to determine the Schottky barrier height, which was found to be 0.378 eV. This value indicates the formation of a stable and reproducible contact favorable for electronic applications. The obtained results demonstrate the high potential of the synthesized MoS2, structures for the development of efficient optoelectronic devices such as Schottky diodes and photodetectors.

This work is devoted to the investigation of the Schottky barrier at metal-two-dimensional semiconductor interfaces based on molybdenum disulfide synthesized by chemical vapor deposition. The relevance of the study is determined by the need for accurate evaluation of contact parameters that critically affect the performance of nanoelectronics devices. The object of the research is mono and few-layer MoS2 films with silver contacts. The aim of the work is to develop and validate a software-based algorithm for automated extraction of activation energy and Schottky barrier height from temperature-dependent current measurements. The proposed approach includes statistical processing of Arrhenius data, uncertainty estimation, confidence interval evaluation, and automatic outlier detection. In contrast to conventional manual analysis, the developed method ensures reproducibility, improves the reliability of the extracted parameters, and reduces subjective bias in the interpretation of experimental results.